Russian Federation
Russian Federation
Russian Federation
UDK 621.3 Электротехника
The work is devoted to the study of radiation effects on FRAM memory chips. The effects of heavy charged particles entering the microcircuits are considered, the results in static and dynamic modes are analyzed. In statistical mode, the sensitivity of FRAM did not show any dependencies on the data pattern, but showed a relationship with fluence. In dynamic mode, the order of access to memory cells does not affect the sensitivity of memory. The dependences of the consumption current on the radiation dose and the annealing time after irradiation are given. An effects map is shown showing a two-band area sensitive to the laser. According to its relative area, this is the peripheral logic of the device. Studies have confirmed the usefulness of only a few effect maps. This is consistent with the results of tests for exposure to heavy charged particles.
Radiation exposure, FRAM chips, electronic component base, heavy charged particles, ionization radiation
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