employee
Bryansk, Bryansk, Russian Federation
Bryansk, Bryansk, Russian Federation
UDK 621.396.6 Радиоэлектронная аппаратура. Схемы
UDK 621.791.16 Сварка ультразвуком (ультразвуковая сварка)
BBK 342 Металловедение
Typical reasons for degradation of micro–welded bimetallic compounds of the aluminum-gold binary system are considered. These types of compounds are often used in the manufacture of semiconductor products (SCPs) and integrated circuits (ICs). Degradation of compounds, revealed during screen tests or during products operating, leads to failures, which dramatically reduces the reliability of electronic equipment (EE). The majority of degradation processes are based on diffusion phenomena, which are mainly determined by temperature, chemical composition and microstructure of metals and alloys. Impurity elements included in the gold coating have a significant effect on the degradation of the wire connections such as crystal contact pads – traverses of package terminals of SCPs. In this regard, it is worth analyzing the effect of various impurities on the diffusion processes and changes in the microstructure of the coating in order to find out the most dangerous chemical elements and determine their role in the degradation of compounds. The paper presents a review of references on the research subject. In the conclusion, the results of analysis in the field of the influence of impurity elements on the degradation of compounds in Al – Au system are summarized, conclusions are drawn about the key role of grain-boundary diffusion on the degradation of micro-welded bimetallic compounds.
gold coating, impurity, aluminum wire, Kirkendall effect, degradation, failure, reliability
1. Gorlov MI, Yemelyanov VA, Strogonov AV. Gerontology of silicon integrated circuits. Moscow: Nauka; 2004.
2. Zenin VV, Stoyan AA, Petrov SV, Chistyakov AV. Assembling 3D products using wire leads. Microelectronics. 2014;43(1):29-42.
3. Efimov IE, Kozyr IYa, Gorbunov YuI. Microelectronics. Physical and technological foundations, reliability. Moscow: Vysshaya Shkola; 1986.
4. Chernyshev AA. Fundamentals of reliability of semiconductor devices and integrated circuits. Moscow: Radio I Svyaz; 1988.
5. Ahmad SS, Smith SK . Au/Al Wire Bond Interface Resistance Degradation Rate Simulations. IEEE Proceedings on the Reliability of Devices and Materials. 2019;19(4):774-781.
6. Kan RU, Haazen P, editors. Physical metallology: phase transformations in metals and alloys and alloys with special physical properties. Moscow: Metallurgiya; 1987.
7. Khmyl AA, Lanin VL, Yemelyanov VA. Galvanic coatings in electronics products. Minsk: Integralpoligraf; 2017.
8. Gorlov MI, Danilin NS. Physical foundations of integrated circuits reliability. Moscow: MAKS Press; 2008.
9. Startseva AV, Kovalev AS, Bobov VYu, Gagloev DR. Study of strength and durability of wire micro-welded aluminum-gold compounds in the manufacture of micromechanical sensors. Proceedings of the XVI Conference of Young Scientists, 2014: Navigation and Traffic Control; 2014.
10. Kolobov YuR, Valiev RZ, Grabovetskaya GP. Grain boundary diffusion and properties of nanostructured materials. Novosibirsk: Nauka; 2001.
11. Horsting K. Purple plague and gold purity. 10th Annual Conference. IRPS, Las Vegas, Nevada, April 5-7, 1972. p. 155-158.
12. Harman GG. Connecting wires in microelectronics.3rd edition. McGraw Hill Professional; 2010.
13. Zenin VV, Ryaguzov AV. Constructive and technological aspects of assemblying semiconductor products: textbook. Voronezh: Voronezh State Technical University; 2005.
14. Schluter ML, editor. Galvanic coatings in mechanical engineering: handbook. Moscow: Mashinostroenie; 1985.
15. Hamburg YuD. Galvanic coatings: handbook. Moscow: Technosphera; 2006.
16. Lu D, Wong KP, editors. Materials for advanced packaging. Springer; 2017.
17. Evans KL, Guthrie TT, Hayes RG. Investigation of the effect of thallium on gold/aluminum wire bond reliability. Los Angeles, California: Proc. ISTFA; 1984.
18. Okumara K. Degradation of bonding strength (Al Wire-Au Film) by Kirkandall voids. Electrochem. Soc. 1981;128:571-575.
19. James HK. Resolution of the gold wire grain growth failure mechanism in plastic encapsulated microelectronic devices. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, September, 1980;3(3):370-374.
20. Shankara KP. Advanced wirebond interconnection technology. New York, Boston, Dordrecht, London, Moscow: Kluwer Academic Publishers; 2004.
21. Lau JH, editor. Thermal stress and strain in microelectronics packaging. New York: Van Nostrand Reinhold; 2012.
22. Korenman IM. Analytical chemistry of thallium. Moscow: Publishing House of the Academy of Sciences of the USSR; 1960.
23. Lyakishev NP, editor. Diagrams of the state of double metal systems: handbook. Moscow: Mashinostroenie;1996.
24. Endicott DW, James HK, Nobel F. Effects of gold-plating additives on semiconductor wire bonding. Plating and Surface Finishing. 1981;68(11):58-61.
25. USA Patent US3833487A C25D3/48 Electrolytic soft gold plating: 1972-12-22 Application filed by Bell Telephone Laboratories Inc; 1972-12-22 Priority to US00317600A; 1974-09-03 Application granted; 1974-09-03 Publication of US3833487A; 1991-09-03 Anticipated expiration; Status Expired - Lifetime.
26. USA Patent US3423295A C25D3/48 Gold plating: 1966-02-23 Application filed by Engelhard Industries Inc; 1969-01-21 Application granted; 1969-01-21Publication of US3423295A; 1981-12-14 Assigned to Engelhard Corporation; 1986-01-21 Anticipated expiration; Status Expired - Lifetime.
27. Dimitrievich S, Raichich-Vuyasinovich M, Truich V. Non-cyanide electrolytes for applying gold coating: review. Internat Journ of Electrochemical Sciences. 2013;8:6620-6646.
28. Schlesinger M, Paunovic M. Modern electroplating. New Jersey: John Wiley & Sons, Inc.; 2010.
29. Vyacheslavov PM, Grilekhes SYa, Burkat GK, Kruglova EG. Electroplating of noble and rare metals. Moscow: Mashinostroenie; 1970.
30. Murcko RM, Susko RA, Lauffer JM. Resistance drift in aluminum to gold ultrasonic wire bonds. IEEE Transactions on components, hybrids, and manufacturing technology. 1991;14(4):843-847.
31. Ejiri Yo, Sakurai T, Arayama Yo, Tsubomatsu Yo, Hatakeyama Sh. Electroless Ni/Pd/Au plating for semiconductor package substrates - effect of gold plating combinations on gold wire bonding reliability. Electronics Packaging Society Journal. 2014;17(4):297-306.
32. Zemlyansky AI, Bormontov AE, Rodivilov SV, Bokarev DI, Zenin VV. Micro-welded joints of gold wire with Cu-Ni metallization of crystals of semiconductor products. Proceedings of Voronezh State University. Physics. Mathematics. 2018;3:22-30.
33. Kato I, Kato T, Terashima H, Watanabe H, Honma H. Influences of electroless nickel film conditions on electroless Au/Pd/Ni wire bondability. Transactions of The Japan Institute of Electronics Packaging. 2010;3(1):78-85.
34. Argibay N, Brumbach MT, Dugger MT, Kotula PG. Grain boundary diffusivity of Ni in Au thin films and the associated degradation in electrical contact resistance due to surface oxide film formation. Journal of Applied Physics. 2013;113(114906).
35. Gang CL, Klass F, Chan BL, Hashim U. The future and technical considerations for the use of gold wire in semiconductor packaging: technical review. Microelectronics International. 2014;31/2:121-128.
36. Du Ya, Gao Li-Yin, Yu D, Liu Zhi-Quan. Comparison and mechanism of electromigration reliability between Cu Wire and Au wire bonding in molding state. Journal of Materials Science: Materials in Electronics [Internet]. 2020 January 06. Available from: doi.org/10.1007/s10854-019-02840-6
37. Schwartz GC, Srikrishnan KV, editors. Handbook of semiconductor interconnection technology. Boca Raton; London; New York: Taylor & Francis Group; 2006.
38. Dini JW, Johnson HR. Influence of codeposited impurities on thermocompression bonding of electroplated gold. Proc. ISHM Symposium; 1979 October; Los Angeles, CA: 1979. p. 89-95.
39. Panusis NT, Bonham HR. Bonding degradation in the tantalum nitride-chromium-gold metallization system. IEEE 11th Annual Proceedings Reliability Physics; 1973. p. 21.
40. Corcoran YL, King AH. Grain boundary diffusion layers on silicon and growth of titanium silicide. Journal of Electronic Materials. 1990;19(11):89-95.
41. Thompson RJ, Cropper DR, Whitaker BW. Bondability problems associated with the Ti-Pt-Au metallization of hybrid microwave thin film circuits. IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 1981;CHMT-4(4):439 - 445.
42. Sidnyaev NI. Review of studies on the physics of failures for reliability assessment of electronic devices of modern radars. Physical Bases of Instrumentation. 2017;6(2(24)):4-52.
43. Wakahayashi S, Murata A, Wakobauashi N. Effects of grain refiners in gold deposits on aluminum wire-bond reliability. Plating and Surface Finishing. 1982;8:63-68.
