AO "Nauchno-issledovatel'skiy institut elektronnoy tehniki"
Russian Federation
GRNTI 29.01 Общие вопросы физики
The article considers the issues of increasing the resistance of the electronic component base (ECB) to dose effects due to the improvement of the technological process. Graphs of the functions of the transfer characteristics of MOSFETs and CMOS inverters before and after radiation exposure are presented. The effect of the charge in the oxide and on the surface formed under the action of radiation is shown.
electronic component base (ECB), radiation exposure, dose effect, microchips, circuitry, integrated circuits (IC), ionizing radiation
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